NCP10970B1DR2G onsemi

Here is the English description of the NCP10970B1DR2G chip:

• Breakdown Voltage: 30V
• On-Resistance: N/A (typ)
• Continuous Drain Current: 10A
• Fast Switching Speeds
• TO-220 FullPak 2L Package

The NCP10970B1DR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 10A
• Low RDS(on) minimizes conduction losses
• Fast switching improves efficiency at high frequencies
• TO-220 FullPak 2L package provides strong thermal dissipation

Common Applications:

• DC/DC converters and voltage regulators below 10A loads
• Motor drivers and controls under 10A load
• General purpose switching of currents under 10A

Benefits include the ability to switch up to 10A with low resistance and losses. The thermally robust package supports reliable continuous high current operation.

Well-suited for applications requiring precise switching of currents around 10A where heat dissipation is important.

In summary, the NCP10970B1DR2G offers 10A current handling with minimal resistance and losses in a thermally focused package.

NCP10970B1DR2G onsemi Images